For ultimate parallel computing systems, to process what is computed at the synapse in neuron, preference is given for the implementation of the devices with the same size as the BL of the synapse array. Utilizing the capability to provide instantaneous current by the selector-based compact neurons enabled effective classification of the analog weighted sum current based on integrate-and-fire or oscillation frequency modulation technique. By precisely fine-tuning the ion migration and phase transition to have multiple states of the nonvolatile PCM and RRAM for the analog synapse, and intentionally enhancing the volatility of the memory for the neuron, all emerging memory-based neuromorphic systems have been reported.
Several aspects of the implementation and utilization of the neuromorphic hardware have remained unexplored. Hence, important features of the synaptic and neuronal devices may differ from speed, energy, and capacity perspectives depending on the applications ranging from cloud, fog, and edge computing. In particular, unlike the conventional silicon transistors, in which performances have been improved primarily by geometrical scaling and cell design, the synaptic and reliability characteristics of each emerging device are strongly related to the materials used. Further, we believe that unconventional computing platforms are not limited to emerging device technologies, and it can be realized by CMOS and new devices integrated systems.
[126] Mixed CMOS-emerging memories hardware can make cognitive tasks more efficient, and will be an intermediate step before ultimately implementing future computing systems implemented entirely with non-CMOS devices. Therefore, it is hoped that the findings and approaches discussed in this article will be a stepping stone toward significant technological advances that can lead to social change beyond building neuromorphic hardware systems.
Acknowledgements
This work was supported by the National Research Foundation (NRF) grant funded by the Korea government (MSIT) (NRF-2020M3F3A2A01081775 and NRF-2021R1C1C1003261).
Conflict of interest
The authors declare no conflict of interest.
References
- 1 G. E. Moore, IEEE Int. Electron Devices Meeting, IEEE, San Fransisco, CA 1975, pp. 11– 13.
- 2 A. Spessot, H. Oh, IEEE Trans. Electron Devices 2020, 67, 4.
- 3 A. Goda, IEEE Trans. Electron Devices 2020, 67, 4.
- 4 J. Von Neumann, The Computer and the Brain, Yale University Press, New Haven, CT 2012.
- 5 S. Rabii, E. Beigne, V. Chandra, B. D. Salvo, R. Ho, R. Pendse, Symp. on VLSI Technology, IEEE, Kyoto, Japan 2019, p. C10-1.
- 6 M. Bear, B. W. Connors, M. A. Paradiso, Neuroscience: Exploring the Brain, 4th ed. 2015.
- 7 E. Kandel, J. Schwartz, T. Jessell, Principles of Neural Science, McGraw-Hill, New York, NY 2000.
- 8 Y. LeCun, Y. Bengio, G. Hinton, Nature 2015, 521, 436.
- 9 A. Krizhevsky, I. Sutskever, G. E. Hinton, in Proc. of the 25th Int. Conf. on Neural Information Processing Systems, Vol. 1, 2012, pp. 1097– 1105.
- 10 A. Graves, A.-R. Mohamed, G. Hinton, IEEE Int. Conf. on Acoustics, Speech and Signal Processing, IEEE, Vancouver 2013, pp. 6645– 6649.
- 11 Y. H. Chen, T. Krishna, J. Emer, V. Sze, IEEE Int. Solid-State Circuits Conf., IEEE, San Francisco, CA 2016, pp. 262– 263.
- 12 V. Sze, Y. H. Chen, T. J. Yang, J. Emer, Proc. IEEE 2017, 105, 12.
- 13 J. Tang, C. Deng, G.-B. Huang, IEEE Trans. Neural Networks Learn. Syst. 2016, 27, 4.
- 14 N. P. Jouppi, C. Young, N. Patil, D. Patterson, G. Agrawal, R. Bajwa, S. Bates, S. Bhatia, N. Boden, A. Borchers, R. Boyle, P.-L. Cantin, C. Chao, C. Clark, J. Coriell, M. Daley, M. Dau, J. Dean, B. Gelb, T. V. Ghaemmaghami, R. Gottipati, W. Gulland, R. Hagmann, C. R. Ho, D. Hogberg, J. Hu, R. Hundt, D. Hurt, J. Ibarz, A. Jaffey, et al., Proc. of the 44th Annual Int. Symp. on Computer Architecture 2017.
- 15 Q. Xia, W. Robinett, M. W. Cumbie, N. Banerjee, T. J. Cardinali, J. J. Yang, W. Wu, X. Li, W. M. Tong, D. B. Strukov, G. S. Snider, G. M. Ribeiro, R. S. Williams, Nano Lett. 2009, 9, 10.
- 16 P. Narayanan, A. Fumarola, L. L. Sanches, K. Hosokawa, S. C. Lewis, R. M. Shelby, G. W. Burr, IBM J. Res. Dev. 2017. 61, 11.
- 17 D. Ielmini, H. S. P. Wong, Nat. Electron. 2018, 1, 333.
- 18 B. Yan, B. Li, X. Qiao, C.-X. Xue, M.-F. Chang, Y. Chen, H. Li, Adv. Intell. Syst. 2019, 1, 1900068.
- 19 S. Schmitt, J. Klaehn, G. Bellec, A. Gruebl, M. Guettler, A. Hartel, S. Hartmann, D. Husmann, K. Husmann, V. Karasenko, M. Kleider, C. Koke, C. Mauch, E. Mueller, P. Mueller, J. Partzsch, M. A. Petrovici, S. Schiefer, S. Scholze, B. Vogginger, R. Legenstein, W. Maass, C. Mayr, J. Schemmel, K. Meier, Int. Joint Conf. on Neural Networks 2017.
- 20 P. A. Merolla, J. V. Arthur, R. A. Icaza, A. S. Cassidy, J. Sawada, F. Akopyan, B. L. Jackson, N. Imam, C. Guo, Y. Nakamura, B. Brezzo, I. Vo, S. K. Esser, R. Appuswamy, B. Taba, A. Amir, M. D. Flickner, W. P. Risk, R. Manohar, D. S. Modha, Science 2014, 345, 6197.
- 21 J.-S. Seo, B. Brezzo, Y. Liu, B. D. Parker, S. K. Esser, R. K. Montoye, B. Rajendran, J. A. Tierno, L. Chang, D. S. Modha, D. J. Friedman, IEEE Custom Integrated Circuits Conf. 2011.
- 22 G. Yeap, X. Chen, B. Yang, C. J. Lin, F. C. Yang, Y. K. Leung, D. W. Lin, C. P. Chen, K. F. Yu, D. Chen, C.-K. Chang, S.-Y. Lin, H.-T. Chen, P.-F. Hung, C. S. Hou, Y.-N. Cheng, J. Chang, L. Yuan, C. J. Lin, C. P. Chen, Y. C. Yeo, M. H. Tsai, Y. H. Chen, H. T. Lin, C. Chui, K. B. Huang, W. Chang, H. T. Lin, K.-H. Chen, R.-S. Chen, et al., IEEE Int. Electron Devices Meeting, Vol. 36, IEEE, San Fransisco, CA 2019, p. 7.
- 23 J. Tang, F. Yuan, X. Shen, Z. Wang, M. Rao, Y. He, Y. Sun, X. Li, W. Zhang, Y. Li, B. Gao, H. Qian, G. Bi, S. Song, J. J. Yang, H. Wu, Adv. Mater. 2019, 31, 49.
- 24 S. Yu, Proc. IEEE, 2018, 106, 2.
- 25 D. Ielmini, S. Ambrogio, Nanotechnology 2020, 31, 092001.
- 26 G. W. Burr, R. M. Shelby, A. Sebastian, S. Kim, S. Kim, S. Sidler, K. Virwani, M. Ishii, P. Narayanan, A. Fumarola, L. L. Sanches, I. Boybat, M. L. Gallo, K. Moon, J. Woo, H. Hwang, Y. Leblebici, Adv. Phys. X 2017, 2, 1.
- 27 D. S. Jeong, C. S. Hwang, Adv. Mater. 2018, 30, 42.
- 28 N. K. Upadhyay, H. Jiang, Z. Wang, S. Asapu, Q. Xia, J. J. Yang, Adv. Mater. Technol. 2019, 4, 1800589.
- 29 A. Seb, M. L. Gallo, R. K. Aljameh, E. Eleftheriou, Nat. Nanotechnol. 2020, 15, 522.
- 30 Z. Wang, H. Wu, G. W. Burr, C. S. Hwang, K. L. Wang, Q. Xia, J. J. Yang, Nat. Rev. Mater. 2020, 5, 173.
- 31 J. J. Yang, D. B. Strukov, D. R. Stewart, Nat. Nanotechnol. 2013, 8, 13.
- 32 S. Bhatti, R. Sbiaa, A. Hirohata, H. Ohno, S. Fukami, S. N. Piramanayagam, Mater. Today 2017, 20, 9.
- 33 N. Setter, D. Damjanovic, L. Eng, G. Fox, S. Gevorgian, S. Hong, A. Kingon, H. Kohlstedt, N. Y. Park, G. B. Stephenson, I. Stolitchnov, A. K. Taganstev, D. V. Taylor, T. Yamada, S. Streiffer, J. Appl. Phys. 2006, 100, 051606.
- 34 H.-S. P. Wong, S. Raoux, S. B. Kim, J. Liang, J. P. Reifenberg, B. Rajendran, M. Asheghi, K. E. Goodson, Proc. IEEE 2010, 98, 12.
- 35 R. Waser, R. Dittmann, G. Staikov, K. Szot, Adv. Mater. 2009, 21, 2632.
- 36 H.-S. P. Wong, H.-Y. Lee, S. Yu, Y.-S. Chen, Y. Wu, P.-S. Chen, B. Lee, F. T. Chen, M. J. Tsai, Proc. IEEE 2012, 100, 6.
- 37 E. J. Fuller, F. E. Gbaly, F. Léonard, S. Agarwal, S. J. Plimpton, R. B. Jacobs-Gedrim, C. D. James, M. J. Marinella, A. A. Tlin, Adv. Mater. 2017, 29, 1604310.
- 38 J. G. Alzate, U. Arslan, P. Bai, J. Brockman, Y. J. Chen, N. Das, K. Fischer, T. Ghani, P. Heil, P. Hentges, R. Jahan, A. Littlejohn, M. Mainuddin, D. Ouellette, J. Pellegren, T. Pramanik, C. Puls, P. Quintero, T. Rahman, M. Sekhar, B. Sell, M. Seth, A. J. Smith, A. K. Smith, L. Wei, C. Wiegand, O. Golonzka, F. Hamzaoglu, IEEE Int. Electron Devices Meeting, IEEE, San Francisco, CA 2019, pp. 2.4.1– 2.4.4.
- 39 S. Dünkel, M. Trentzsch, R. Richter, P. Moll, C. Fuchs, O. Gehring, M. Majer, S. Wittek, B. Müller, T. Melde, H. Mulaosmanovic, S. Slesazeck, S. Müller, J. Ocker, M. Noack, D.-A. Löhr, P. Polakowski, J. Müller, T. Mikolajick, J. Höntschel, B. Rice, J. Pellerin, S. Beyer, IEEE Int. Electron Devices Meeting, IEEE, San Francisco, CA 2017, pp. 19.7.1– 19.7.4.
- 40T. Kim, H. Choi, M. Kim, J. Yi, D. Kim, S. Cho, H. Lee, C. Hwang, E.-R. Hwang, J. Song, S. Chae, Y. Chun, J.-K. Kim, IEEE Int. Electron Devices Meeting, IEEE, San Francisco, CA 2018, pp. 37.1.1– 37.1.4.
- 41 P. Jain, U. Arslan, M. Sekhar, B. C. Lin, L. Wei, T. Sahu, J. A. Vinasco, A. Vangapaty, M. Meterelliyoz, N. Strutt, A. B. Chen, P. Hentges, P. A. Quintero, C. Connor, O. Golonzka, K. Fischer, F. Hamzaoglu, IEEE Int. Solid-State Circuits Conf., IEEE, San Francisco, CA, 2019 pp. 212– 214.
- 42 X. Peng, S. Huang, Y. Luo, X. Sun, S. Yu, IEEE Int. Electron Devices Meeting, IEEE, San Francisco, CA 2019, pp. 32.5.1– 32.5.4.
- 43 Z. Luo, X. Zhang, C. Xiong, J. Chen, Adv. Funct. Mater. 2014, 25, 1.
- 44 D. Kadetotad, Z. Xu, A. Mohanty, P.-Y. Chen, B. Lin, J. Ye, S. Vrudhula, S. Yu, Y. Cao, J.-S. Seo, IEEE J. Emerg. Sel. Top. Circuits Syst. 2015, 5, 2.
- 45 G. Indiveri, B. L. Barranco, T. J. Hamilton, A. van Schaik, R. E. Cummings, T. Delbruck, S.-C. Liu, P. Dudek, P. Häfliger, S. Renaud, J. Schemmel, G. Cauwenberghs, J. Arthur, K. Hynna, F. Folowosele, S. Saighi, T. S. Gotarredona, J. Wijekoon, Y. Wang, K. Boahen, Front. Neurosci. 2011, 5, 73.
- 46 B. Karlik, A. Vehbi, Int. J. Artif. Intell. Expert Syst. 2011, 1, 4.
- 47 M. L. Gallo, A. Sebastian, J. Phys. D: Appl. Phys. 2020, 53, 213002.
- 48 A. Sebastian, M. L. Gallo, G. W. Burr, S. Kim, M. BrightSky, E. Eleftheriou, J. Appl. Phys. 2018, 124, 111101.
- 49 G. W. Burr, R. M. Shelby, S. Sidler, C. D. Nolfo, J. Jang, I. Boybat, R. S. Shenoy, P. Narayanan, K. Virwani, E. U. Giacometti, B. N. Kurdi, H. Hwang, IEEE Trans. Electron Devices 2015, 62, 11.
- 50 S. B. Kim, N. Sosa, M. BrightSky, D. Mori, W. Kim, Y. Zhu, K. Suu, C. Lam, I. E. E. E. Trans. Electron Devices 2016, 63, 10.
- 51 O. Bichler, M. Suri, D. Querlioz, D. Vuillaume, B. DeSalvo, C. Gamrat, IEEE Trans. Electron Devices 2012, 59, 8.
- 52 L. Goux, I. Valov, Phys. Status Solidi (a) 2015, 213, 2.
- 53 F. M. Bayat, M. Prezioso, B. Chakrabarti, H. Nili, I. Kataeva, D. Strukov, Nat. Commun. 2018, 9, 2331.
- 54 F. Cai, J. M. Correll, S. H. Lee, Y. Lim, V. Bothra, Z. Zhang, M. P. Flynn, W. D. Lu, Nat. Electron. 2019, 2, 290.
- 55 C. Li, D. Belkin, Y. Li, P. Yan, M. Hu, N. Ge, H. Jiang, E. Montgomery, P. Lin, Z. Wang, W. Song, J. P. Strachan, M. Barnell, Q. Wu, R. S. Williams, J. J. Yang, Q. Xia, Nat. Commun. 2018, 9, 2385.
- 56 J. Woo, K. Moon, J. Song, S. Lee, M. Kwak, J. Park, H. Hwang, IEEE Electron Device Lett. 2016, 37, 8.
- 57 P. Yao, H. Wu, B. Gao, S. B. Eryilmaz, X. Haung, W. Zhang, Q. Zhang, N. Deng, L. Shi, H.-S. P. Wong, H. Qian, Nat. Commun. 2017, 8, 15199.
- 58 P. Yao, H. Wu, B. Gao, J. Tang, Q. Zhang, W. Zhang, J. J. Yang, H. Qian, Nature 2020, 577, 641.
- 59 R. Mochida, K. Kouno, Y. Hayata, M. Nakayama, T. Ono, H. Suwa, R. Yasuhara, K. Katayama, T. Mikawa, Y. Gohou, Symp. on VLSI Technology, IEEE, Honolulu, HI 2018, pp. 175– 176.
- 60 J. Woo, S. Yu, IEEE Nanotechnol. Mag. 2018, 12, 3.
- 61 J. Woo, A. Padovani, K. Moon, M. Kwak, L. Larcher, H. Hwang, IEEE Electron Device Lett. 2017, 38, 9.
- 62 W. Wu, H. Wu, B. Gao, N. Deng, S. Yu, H. Qian, IEEE Electron Device Lett. 2017, 38, 8.
- 63 B. Gao, H. Wu, W. Wu, X. Wang, P. Yao, Y. Xi, W. Zhang, N. Deng, P. Huang, X. Liu, J. Kang, H. Chen, S. Yu, H. Qian, IEEE Int. Electron Devices Meeting, IEEE, Francisco, CA 2017, pp. 4.4.1– 4.4.4.
- 64 S. Park, A. Sheri, J. Kim, J. Noh, J. Jang, M. Jeon, B. Lee, B. R. Lee, B. H. Lee, H. Hwang, IEEE Int. Electron Devices Meeting, IEEE, Washington, DC 2013, pp. 25.6.1– 25.6.4.
- 65 I.-T. Wang, C.-C. Chang, L.-W. Chiu, T. Chou, T.-H. Hou, Nanotechnology 2016, 27, 365204.
- 66 J. Woo, S. Yu, IEEE Trans. Very Large Scale Integr. Syst. 2019, 27, 9.
- 67 L. Goux, A. Fantini, R. Degraeve, N. Raghavan, R. Nogon, S. Strangio, G. Kar, D. J. Wouters, Y. Y. Chen, M. Komura, F. D. Stefano, V. V. Afanas'ev, M. Jurczak, Symp. on VLSI Technology 2013.
- 68 C. Sung, A. Padovani, B. Beltrando, D. Lee, M. Kwak, S. Lim, L. Larcher, V. D. Marca, H. Hwang, J. Electron Devices Soc. 2019, 7, 404.
- 69 T. Kim, H. Kim, J. Kim, J.-J. Kim, IEEE Electron Device Lett. 2017, 38, 9.
- 70 S. Yu, P.-Y. Chen, Y. Cao, L. Xia, Y. Wang, H. Wu, IEEE Int. Electron Devices Meeting, IEEE, Washington, DC 2015, pp. 17.3.1– 17.3.4.
- 71 P.-Y. Chen, S. Yu, IEEE Int. Reliability Physics Symp. 2018.
- 72 M. Zhao, B. Gao, J. Tang, H. Qian, H. Wu, Appl. Phys. Rev. 2020, 7, 1.
- 73 F. Cai, S. Kumar, T. V. Vaerenbergh, R. Liu, C. Li, S. Yu, Q. Xia, J. J. Yang, R. Beausoleil, W. Lu, J. P. Strachan, preprint, arXiv:1903.11194 2019.
- 74 S. Choi, S. H. Tan, Z. Li, Y. Kim, C. Choi, P.-Y. Chen, H. Yeon, S. Yu, J. Kim, Nat. Mater. 2018, 17, 335.
- 75 J. Park, M. Kwak, K. Moon, J. Woo, D. Lee, H. Hwang, IEEE Electron Device Lett. 2016, 37, 12.
- 76 Y. Wang, W. D. Richards, S. P. Ong, L. J. Miara, J. C. Kim, Y. Mo, G. Ceder, Nat. Mater. 2015, 14, 1026.
- 77 S. Kim, T. Todorov, M. Onen, T. Kokmen, D. Bishop, P. Solomon, K.-T. Lee, M. Copel, D. B. Farmer, J. A. Ott, T. Ando, H. Miyazoe, V. Narayanan, J. Rozen, IEEE Int. Electron Devices Meeting, IEEE, San Francisco, CA 2019, pp. 35.7.1– 35.7.4.
- 78 C.-S. Yang, D.-S. Shang, N. Liu, E. J. Fuller, S. Agrawal, A. A. Talin, Y.-Q. Li, B.-G. Shen, Y. Sun, Adv. Funct. Mater. 2018, 28, 1804170.
- 79 J. Tang, D. Bishop, S. Kim, M. Copel, T. Gokmen, T. Todorov, S. Shin, K.-T. Lee, P. Solomon, K. Chan, W. Haensch, J. Rozen, IEEE Int. Electron Devices Meeting, IEEE, San Francisco, CA 2018, pp. 13.1.1– 13.1.4.
- 80 Y. Li, E. J. Fuller, S. Asapu, S. Agarwal, T. Kurita, J. J. Yang, A. A. Talin, ACS Appl. Mater. Interfaces 2019, 11, 38982.
- 81 R. D. Nikam, M. Kwak, J. Lee, K. G. Rajput, W. Banergee, H. Hwang, Sci. Rep. 2019, 9, 18883.
- 82 J. Lee, S. Lim, M. Kwak, J. Song, H. Hwang, Nanotechnology 2019, 30, 255202.
- 83 E. J. Fuller, S. T. Keene, A. Melianas, Z. Wang, S. Agarwal, Y. Li, Y. Tuchman, C. D. James, M. J. Marinella, J. J. Yang, A. Salleo, A. A. Talin, Science 2019, 364, 570.
- 84 S. Mathews, R. Ramesh, T. Venkatesan, J. Benedetto, Science 1997, 276, 5310.
- 85 J. Müller, E. Yurchuk, T. Schlösser, J. Paul, R. Hoffmann, S. Müller, D. Martin, S. Slesazeck, P. Polakowski, J. Sundqvist, M. Czernohorsky, K. Seidel, P. Kücher, R. Boschke, M. Trentzsch, K. Gebauer, U. Schröder, T. Mikolajick, Symp. on VLSI Technology, IEEE, Honolulu, HI 2012, pp. 25– 26.
- 86 M. H. Park, Y. H. Lee, H. J. Kim, Y. J. Kim, T. Moon, K. D. Kim, J. Müller, A. Kersch, U. Schroeder, T. Mikolajick, C. S. Hwang, Adv. Mater. 2015, 27, 11.
- 87 Z. Krivokapic, U. Rana, R. Galatage, A. Razavieh, A. Aziz, J. Liu, J. Shi, H. J. Kim, R. Sporer, C. Serrao, A. Busquet, P. Polakowski, J. Müller, W. Kleemeier, A. Jacob, D. Brown, A. Knorr, R. Carter, S. Banna, IEEE Int. Electron Devices Meeting, IEEE, San Francisco, CA, 2017, pp. 15.1.1– 15.1.4.
- 88 M. Jerry, P.-Y. Chen, J. Zhang, P. Sharma, K. Ni, S. Yu, S. Datta, IEEE Int. Electron Devices Meeting, IEEE, San Francisco, CA 2017, pp. 6.2.1– 6.2.4.
- 89 M. Jerry, S. Dutta, A. Kazemi, K. Ni, J. Zhang, P.-Y. Chen, P. Sharma, S. Yu, X. S. Hu, M. Niemier, S. Datta, J. Phys. D: Appl. Phys. 2018, 51, 434001.
- 90 M. Seo, M.-H. Kang, S.-B. Jeon, H. Bae, J. Hur, B. C. Jang, S. Yun, S. Cho, W.-K. Kim, M.-S. Kim, K.-M. Hwang, S. Hong, S.-Y. Choi, Y.-K. Choi, IEEE Electron Device Lett. 2018, 39, 9.
- 91 W. Chung, M. Si, P. D. Ye, IEEE Int. Electron Devices Meeting, IEEE, San Francisco, CA 2018, pp. 15.2.1– 15.2.4.
- 92 L. Chen, T.-Y. Wang, Y.-W. Dai, M.-Y. Cha, H. Zhu, Q.-Q. Sun, S.-J. Ding, P. Zhou, L. Chua, D. W. Zhang, Nanoscale 2018, 10, 15826.
- 93 R. Berdan, T. Marukame, S. Kabuyanagi, K. Ota, M. Saitoh, S. Fujii, J. Deguchi, Y. Nishi, Symp. on VLSI Technology, IEEE, Kyoto 2019, pp. T22– T23.
- 94 H. Mulaosmanovic, J. Ocker, S. Müller, M. Noack, J. Müller, P. Polakowski, T. Mikolajick, S. Slesazeck, Symp. on VLSI Technology, IEEE, Kyoto 2017, pp. T176– T177.
- 95 M.-K. Kim, J.-S. Lee, Nano Lett. 2019, 19, 3.
- 96 H. Ryu, H. Wu, F. Rao, W. Zhu, Sci. Rep. 2019, 9, 20383.
- 97 A. F. Vincent, J. Larroque, N. Locatelli, N. B. Romdhane, O. Bichler, C. Gamrat, W. S. Zhao, J.-O. Klein, S. G. Retailleau, D. Querlioz, IEEE Trans. Biomed. Circuits Syst. 2015, 9, 2.
- 98 C.-C. Chang, M.-H. Wu, J.-W. Lin, C.-H. Li, V. Parmar, H.-Y. Lee, J.-H. Wei, S.-S. Shue, M. Suri, T.-S. Chang, T.-H. Hou, ACM/IEEE Design Automation Conf., 2019.
- 99 D. Zhang, L. Zeng, K. Cao, M. Wang, S. Peng, Y. Zhang, Y. Zhang, J.-O. Klein, Y. Wang, W. Zhao, IEEE Trans. Biomed. Circuits Syst. 2016, 10, 828.
- 100 J. Doevenspeck, K. Garello, B. Verhoef, R. Degraeve, S. Van Beek, D. Crotti, F. Yasin, S. Couet, G. Jayakumar, I. A. Papistas, P. Debacker, R. Lauwereins, W. Dehaene, G. S. Kar, S. Cosemans, A. Mallik, D. Verkest, Symp. on VLSI Technology, 2020.
- 101 Y. Cao, A. W. Rushforth, Y. Sheng, H. Zheng, K. Wang, Adv. Funct. Mater. 2019, 29 1808104.
- 102 A. Kurenkov, S. DuttaGupta, C. Zhangm, S. Fukami, Y. Horio, H. Ohno, Adv. Mater. 2019, 31, 1900636.
- 103 G. Cristiano, M. Giordano, S. Ambrogio, L. P. Romero, C. Cheng, P. Narayanan, H. Tsai, R. M. Shelby, G. W. Burr, J. Appl. Phys. 2018, 124, 151901.
- 104 Y. Li, S. Kim, X. Sum, P. Solomon, T. Gokmen, H. Tsai, S. Koswatta, Z. Ren, R. Mo, C. C. Yeh, W. Haensch, E. Leobandung, Symp. on VLSI Technology, IEEE, Honolulu, HI 2018, pp. 25– 26.
- 105 S. Ambrogio, P. Narayanan, H. Tsai, R. M. Shelby, I. Boybat, C. D. Nolfo, S. Sidler, M. Giordano, M. Bodini, N. C. P. Farinha, B. Killeen, C. Cheng, Y. Jaoudi, G. W. Burr, Nature 2018, 558, 60.
- 106 X. Sun, P. Wang, K. Ni, S. Datta, S. Yu, IEEE Int. Electron Devices Meeting, IEEE, San Francisco, CA 2018, pp. 3.1.1– 3.1.4.
- 107 G. W. Burr, R. S. Shenoy, K. Virwani, P. Narayanan, A. Padilla, B. Kurdi, H. Hwang, J. Vacuum Sci. Technol. B 2014, 32, 4.
- 108 Z. Yang, C. Ko, S. Ramanathan, Annu. Rev. Mater. Res. 2011, 41, 337.
- 109 S. R. Ovshinsky, J. Non-Cryst. Solids 1970, 2, 347.
- 110 D. Lee, M. Kwak, K. Moon, W. Choi, J. Park, J. Yoo, J. Song, S. Lim, C. Sung, W. Banergee, H. Hwang, Adv. Electron. Mater. 2019, 5, 1800866.
- 111 Z. Wang, S. Joshi, S. Savel'ev, W. Song, R. Midya, Y. Li, M. Rao, P. Yan, S. Asapu, Y. Zhao, H. Jiang, P. Lin, C. Li, J. H. Yoon, N. K. Upadhyay, J. Zhang, M. Hu, J. P. Strachan, M. Barnell, Q. Wu, H. Wu, R. S. Williams, Q. Xia, J. J. Yang, Nat. Electron. 2018, 1, 137.
- 112 Z. Wang, M. Rao, R. Midya, S. Joshi, H. Jiang, P. Lin, W. Song, S. Asapu, Y. Zhuo, C. Li, H. Wu, Q. Xia, J. J. Yang, Adv. Funct. Mater. 2018, 28, 6.
- 113 P. Stoliar, J. Tranchant, B. Corraze, E. Janod, M.-P. Besland, F. Tesler, M. Rozenberg, L. Carlo, Adv. Funct. Mater. 2017, 27, 11.
- 114 T. Yajima, T. Nishimura, A. Toriumi, Symp. on VLSI Technology, IEEE, Honolulu, HI 2018, pp. 27– 28.
- 115 T. Tuma, A. Pantazi, M. L. Gallo, A. Sebastian, E. Eleftheriou, Nat. Nanotechnol. 2016, 11, 693.
- 116 H. Mulaosmanovic, E. Chicca, M. Bertele, T. Mikolajick, S. Slesazeck, Nanoscale 2018, 10, 21755.
- 117 M.-H. Wu, M.-C. Hong, C.-C. Chang, P. Sahu, J.-H. Wei, H.-Y. Lee, S.-S. Sheu, T.-H. Hou, Symp. on VLSI Technology, IEEE, Kyoto 2019, pp. T34– T35.
- 118 M. D. Pickett, G. M. Ribeiro, R. S. Williams, Nat. Mater. 2013, 12, 114.
- 119 N. Shukla, A. Parihar, E. Freeman, H. Paik, G. Stone, V. Narayanan, H. Wen, Z. Cai, V. Gopalan, R. E. Herbert, D. G. Schlom, A. Raychowdhury, S. Datta, Sci. Rep. 2015, 4, 4964.
- 120 K. Moon, E. Cha, J. Park, S. Gi, M. Chu, K. Baek, B. Lee, S. Oh, H. Hwang, IEEE Int. Electron Devices Meeting, IEEE, Washington, DC 2015, pp. 17.1.1– 17.1.4.
- 121 L. Gao, P.-Y. Chen, S. Yu, Appl. Phys. Lett. 2017, 111, 103503.
- 122 J. Woo, P. Wang, S. Yu, IEEE Electron Device Lett. 2019, 40, 8.
- 123 S. Kim, M. Ishii, S. Lewis, T. Perri, M. BrightSky, W. Kim, R. Jordan, G. W. Burr, N. Sosa, A. Ray, J.-P. Han, C. Miller, K. Hosokawa, C. Lam, IEEE Int. Electron Devices Meeting, IEEE, Washington, DC 2015, pp. 17.1.1– 17.1.4.
- 124 K. Ni, M. Jerry, J. A. Smith, S. Datta, Symp. on VLSI Technology, IEEE, Honolulu, HI 2018, pp. 131.
- 125 K. Ni, X. Yin, A. F. Laguna, S. Joshi, S. Dünkel, M. Trentzsch, J. Müeller, S. Beyer, M. Niemier, X. S. Hu, Datta Suman, Nat. Electron. 2019, 2, 11.
- 126 M. R. Azghadi, Y.-C. Chen, J. K. Eshraghian, J. Chen, C.-Y. Lin, A. Amirsoleimani, A. Mehonic, A. J. Kenyon, B. Fowler, J. C. Lee, Y.-F. Chang, Adv. Intell. Syst. 2020, 2, 1900189.