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\begin{document}

\title{Ferroelectric Hf0.5Zr0.5O2 for Analog Memory and In-Memory Computing Applications down to Deep Cryogenic Temperatures}



\author[1]{Heorhii Bohuslavskyi}%
\author[1]{Kestutis Grigoras}%
\author[1]{Mário Ribeiro}%
\author[1]{Mika Prunnila}%
\author[1,2]{Sayani Majumdar}%
\affil[1]{VTT Technical Research Centre of Finland Ltd}%
\affil[2]{Information Technology and Communication Sciences, Tampere University}%


\vspace{-1em}



  
  \date{June 18, 2024}


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\begin{abstract}
Low-power non-volatile memories operating down to deep cryogenic
temperatures are important for a large spectrum of applications from
high-performance computing and electronics interfacing quantum computing
hardware to space-based electronics. Despite the potential of
Hf\textsubscript{0.5}Zr\textsubscript{0.5}O\textsubscript{2} (HZO),
thanks to its compatibility with complementary metal-oxide-semiconductor
(CMOS) back-end-of line processing, only a few studies of HZO based
memory devices down to cryogenic operation temperatures exist. Here, we
report on analog ferroelectric memory stack fabrication with 10 nm HZO
and its detailed characterization under a wide range of pulse amplitudes
and frequencies from 300 K down to 4 K. When operated at temperatures
below 100 K, HZO devices can support high amplitude voltage pulses,
yielding record high remnant polarization P\textsubscript{r} of up to
75\selectlanguage{greek}µ\selectlanguage{english}C cm\textsuperscript{-2} at \selectlanguage{ngerman}±7 Vp (14 V\textsubscript{pp}) pulse
amplitudes accompanied with frequency-dependent memory window between 6
and 8 V. Devices show excellent endurance exceeding
10\textsuperscript{9} cycles of ±5 V\textsubscript{p} (10
V\textsubscript{pp}) and P\textsubscript{r} of 30 \selectlanguage{greek}µ\selectlanguage{english}C
cm\textsuperscript{-2} without significant degradation of coercive
voltages or loss of polarization at cryogenic temperatures. At least 20
reproducible analog states for temperatures below 100 K with almost
ideal linearity of intermediate polarization states in both pulse
directions are observed, demonstrating the high potential of analog
cryogenic ferroelectric memories, essential for online training in
In-Memory-Computing architecture.%
\end{abstract}%



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